Highlights in 2017
| 06/2017 | Paper featured on the inside front cover of Lab Chip |
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 | Our review paper on Magnetic sensing platform technologies is highlighted on the inside front cover of Lab Chip. Among a wide choice of fundamental biosensing principles, magnetic sensing technologies enabled by magnetic field sensors and magnetic particles offer attractive advantages. In this review, we highlight the historical basis, routes, recent advances and applications of magnetic biosensing platform technologies based on magnetoresistive sensors. The original work was published in Lab Chip 17, 1884 (2017). URL
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| 04/2017 | Our paper is featured in Highlights of 2016 of the JPhysD |
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 | Our article “Magnetism in curved geometries” was selected by the Editorial Board of the Journal of Physics D: Applied Physics to be featured in their Highlights of 2016. Highlights in JPhysD are chosen on the basis of timeliness, scientific impact and broadness of appeal. All the JPhysD Highlights 2016 can be viewed here: URL The original work is published in J. Phys. D: Appl. Phys. 49, 363001 (2016). URL PDF |
| 02/2017 | Our work on AF-MERAM is highlighted in Nature Nanotechnology |
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 | Our paper on antiferromagnetic magnetoelectric random access is highlighted in Nature Nanotechnology: URL PDF This work was carried out in close collaboration with partners at the IFW Dresden (Dr. R. Hühne Prof. O. G. Schmidt), University of Basel (Prof. Maletinsky). The paper is published in Nature Communications 8, 13985 (2017).URL PDF |
| 01/2017 | Random Access Memory on a Low Energy Diet | |||||||
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 | Memory chips are among the most basic components in computers. The random access memory is where processors temporarily store their data. We demonstrate a first-of-its-kind room-temperature memory element that is based purely on an antiferromagnets - antiferromagnetic magnetoelectric random access memory (AF-MERAM) - and can be written by using an electric field instead of a current. This writing method dissipated no energy in the electrical resistance of the memory cell. At the same time, we show that the data can be read-out all-electrically even though the antiferromagnetic is an electrical insulator. We expect these results will spark research in electric field written antiferromagnetic memory elements, but also in other branches of antiferromagnetic spintronics, such as logics and magnonics. This work was carried out in close collaboration with partners at the IFW Dresden (Dr. R. Hühne Prof. O. G. Schmidt), University of Basel (Prof. Maletinsky). The paper is published in Nature Communications 8, 13985 (2017). URL PDF
This work is highlighted in the resources below (among others) and have reached a very positive metrics by now:
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