Highlights in 2024
03/2024 | Paper featured as a cover of Nature Electronics |
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Our paper on the discovery of the nonlinear Hall effect in elementary Bi thin films is highlighted as a cover of Nature Electronics. We demonstrate that in the elemental (semi)metal bismuth, the room-temperature nonlinear Hall effect is generated by surface states that are characterized by a Berry curvature triple: a quantity governing a skew scattering effect that generates non-linear transverse currents. The strength of nonlinear Hall effect can be controlled on demand using an extrinsic classical shape effect: the geometric nonlinear Hall effect. We performed high harmonic generation experiments to show the potential of polycrystalline Bi thin films for optoelectronic applications in the terahertz (THz) spectral domain. This work is result of fruitful cooperation of the HZDR team with the group of Prof. Carmine Ortix (University of Salerno, Italy). P. Makushko, S. Kovalev, Y. Zabila, I. Ilyakov, A. Ponomaryov, A. Arshad, G. L. Prajapati, T. V. A. G. de Oliveira, J.-C. Deinert, P. Chekhonin, I. Veremchuk, T. Kosub, Y. Skourski, F. Ganss, D. Makarov, C. OrtixA tunable room-temperature nonlinear Hall effect in elemental bismuth thin films Nature Electronics 7, 207 (2024). URL PDF
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